31 October 1994 Compound material investigation by spectroscopic ellipsometry
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191969
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
It is shown that spectroellipsometry (SE) as a non-destructive and contactless optical method may be used for characterization of transition layer properties, determination of optical bands positions and free-carrier concentration, evaluation of composition of compound materials and so on. A set of computer programs for the determination of dielectric functions (epsilon) 1 ((omega) ) and (epsilon) 2((omega) ) from ellipsometric angles (psi) and (Delta) was developed for the system with one, two and three interfaces. Computer simulations of electron band structure of monoatomic and compound materials (Si, C, SiC), including microcrystalline ones, were also made. The composition of some compound materials (SiC,HTSC) have been obtained from comparison of spectroellipsometry data with theory predictions.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir G. Litovchenko, Vladimir G. Litovchenko, Sergey I. Frolov, Sergey I. Frolov, Nickolai I. Klyui, Nickolai I. Klyui, "Compound material investigation by spectroscopic ellipsometry", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191969; https://doi.org/10.1117/12.191969
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