31 October 1994 Laser-interference dilatometry method for the investigation of thin-film structure mechanical stability
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191989
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
The perfection of vacuum technology of thin film structure production of different functional applications is to a great extent defined by the technical level of the devices for investigation of mechanical properties of thin films. Improvement of operational characteristic features of film structures is restrained by lack of mechanical stability which in its turn is considerably influenced by the level of internal macro- and microstresses. In this paper the method and device for thin films mechanical stability investigation are presented and the examples of PbF2 and As2S3 coatings are furnished.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. L. Trunov, A. G. Antchugin, N. D. Savtchenko, V. M. Rubish, "Laser-interference dilatometry method for the investigation of thin-film structure mechanical stability", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191989; https://doi.org/10.1117/12.191989
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