31 October 1994 Light-scattering method for structural perfection testing of both silicon surface and near-surface layers
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191991
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Studies of both superclean silicon wafer surface and subsurface layer have shown high informative possibilities of the light scattering method. It was found that measurements of light scattering indicatrix vs azimuth make it possible to fix the occurrence of atomic steps on the surface studied. The possibility of detecting stacking faults in silicon single crystals is demonstrated by analyzing the intensity of the scattered light with a 442 nm wavelength during scanning of the sample surface with a focused laser beam.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. E. Domashev, Yuri M. Shirshov, Valeri A. Sterligov, Yuri V. Subbota, Sergey V. Svechnikov, "Light-scattering method for structural perfection testing of both silicon surface and near-surface layers", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191991; https://doi.org/10.1117/12.191991
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