31 October 1994 Luminescence profiling: a diagnostic method for an impurities-defects system in semiconductor materials
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191975
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
In this paper a new method of impurities defect interaction monitoring by analyzing the low temperature many-bands photoluminescence spectra (PL) under the nonuniform external perturbation of the defect system is presented. As an example a PL spectra of cadmium telluride monocrystal plates after annealing in evacuated ampoule, cadmium and gallium atmosphere are discussed versus a coordinate of diffusion. The same well known background impurities such as Cu, Li, P and their complexes with native defects were studied under non- uniform deviation from stoichiometric composition of material toward the sample thickness.
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Vladimir N. Babentsov, Vladimir N. Babentsov, Aleksandr I. Vlasenko, Aleksandr I. Vlasenko, N. I. Tarbaev, N. I. Tarbaev, } "Luminescence profiling: a diagnostic method for an impurities-defects system in semiconductor materials", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191975; https://doi.org/10.1117/12.191975
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