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31 October 1994 Multiple charging of recombination centers as one of the causes of semiconductor scintillators inertiality
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191985
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
The new scintillation x-ray and gamma-ray detectors of `semiconductor scintillator- photodiode' type are preferential as the traditional scintillator-photoelectronic impurity systems. In particular, the ZnSe(Te)-based scintillators, connected to silicone photodiode, have a light yield 1.5 - 2 times larger than the light yield for the CsJ(Te). The shortcoming of ZnSe scintillators is their relatively large inertiality. The x-ray luminescence (XL) signal relaxation is not being described by the simple exponential or hyperbolical law. After the XL extinguishing, one can observe even some XL strengthening, that leads to the significant shining time increase. To reveal the ZnSe scintillators inertiality causes, an investigation of the impurity semiconductor luminescence via computer modeling has been carried out. The kinetics, temperature dependence, and infrared irradiation influence have been investigated. The properties of the system containing the multiple charged recombination centers (MRC), in particular the amphoteric centers (AC), were compared to properties of the system containing the simple recombination centers (SRC) only.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. D. Ryzhikov, V. N. Suprunenko, and Olegh V. Vakulenko "Multiple charging of recombination centers as one of the causes of semiconductor scintillators inertiality", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191985
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