31 October 1994 Optical diagnostics of quaternary narrow-gap semiconductors
Author Affiliations +
Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191988
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Optical diagnostics of HgCdMnTe, HgCdMnSe narrow-gap semiconductors have been performed by means of FIR vibrational spectroscopy and IR luminescence for the case of low manganese content. Primary attention is given to the spectral features attributed to structural disordering or defects presence both in perfect and in real crystalline structures of HgCdTe(Se).
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georgiy G. Tarasov, Yuri I. Mazur, Jens Wolfgang Tomm, S. I. Kriven, S. R. Lavorik, N. V. Shevchenko, "Optical diagnostics of quaternary narrow-gap semiconductors", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191988; https://doi.org/10.1117/12.191988
PROCEEDINGS
10 PAGES


SHARE
Back to Top