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31 October 1994 Photodiffractive and photoabsorptive techniques for nondestructive control of semiconducting wafers and structures
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191966
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Investigation of the interaction of powerful laser radiation with semiconductors allows us to develop a number of novel techniques for active spectroscopy of semiconductors. Different approaches, based on light induced modulation of refractive or absorptive index of the semiconductor via photothermal, photorefractive, resonant exitonic or free carrier based effects has been used to reach the goal. In this paper we review some applications of two nondestructive techniques for characterization of bulk semiconductors and structures: transient free carrier grating technique and combined optical-microwave technique, both based correspondingly on refractive or absorption indices modulation by free carriers. The case of coexisting refractive index modulation mechanisms by free carriers (FC) and by light induced space-charge (SC) electric fields is analyzed concerning the role of defects in photorefractive GaAs crystals. The applications of those techniques given below are mainly based on investigations, performed at the Laboratory of Optical Diagnostics of Semiconductors at Vilnius University or in collaboration with other research institutions.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kestutis Jarasiunas and E. Gaubas "Photodiffractive and photoabsorptive techniques for nondestructive control of semiconducting wafers and structures", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191966
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