Photoluminescence characterization of silicon subjected to various industrial treatments

Mikhail Ya. Valakh; Galina Yu. Rudko; N. I. Shakhraychuk

doi:10.1117/12.191971

31 October 1994 Photoluminescence characterization of silicon subjected to various industrial treatments

Mikhail Ya. Valakh, Galina Yu. Rudko, N. I. Shakhraychuk

Author Affiliations +

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191971
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

Photoluminescence investigations of silicon subjected to such industrial treatments as implantation, high temperature postimplantation annealing, treatment in high frequency discharge plasma, as well as the prolonged thermal annealing with the formation of thermal donors were carried out. It was shown that photoluminescence can be used for direct observation of the implanted impurity activation under various postimplantation treatments. Photoluminescence also proved to be useful for indirect control of thermal donors generation in Si:Ge.

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Mikhail Ya. Valakh, Galina Yu. Rudko, and N. I. Shakhraychuk "Photoluminescence characterization of silicon subjected to various industrial treatments", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191971

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