31 October 1994 Polarization of the subthreshold emission and diagnostic of mechanical strain in semiconductor lasers and light-emitting diodes
Author Affiliations +
Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191993
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
A measurement system with a rotating polaroid was constructed which allows us to detect the degree of the light polarization ((rho) ) of 0.1%. The dependencies of r were studied on pumping current (I), axial stress ((sigma) ) and temperature (T) for AlGaAs diode lasers (DL), as well as variations of (rho) with the parameters of the detecting system. The validity of the one-dimensional Cassidy's model was argued to describe the polarization phenomena in the active region of DL. The obtained data demonstrate the possibility to evaluate the mechanical strain in the active layer of DL and estimate the difference in reflectivities between transverse electric (TE) and transverse magnetic (TM) modes of the output at varying mechanical strain. The developed experimental system and technique are simple, sensitive and robust enough to be used under the conditions of industrial producing DLs.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Ptashchenko, Alexander A. Ptashchenko, Ludvig P. Prokopovich, Ludvig P. Prokopovich, Michael V. Deych, Michael V. Deych, } "Polarization of the subthreshold emission and diagnostic of mechanical strain in semiconductor lasers and light-emitting diodes", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191993; https://doi.org/10.1117/12.191993
PROCEEDINGS
7 PAGES


SHARE
Back to Top