31 October 1994 Stress diagnostics in the plates of semiconductor crystals by means of light polarization modulation
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191981
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Peculiarities of the birefringence in Si-crystals caused by mechanical stress are investigated, using a method based on polarization modulation by means of a photoelastic modulator. Samples with the external operated stress and conventional Si-plates with the nonregular residual inner stress were tested by employing this method. Registration of the stress with the value more than 10-3 kg/cm2, investigation of the value of the stress spatial distribution and determination of the direction of the strain caused by this stress are available.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris K. Serdega, V. G. Zykov, "Stress diagnostics in the plates of semiconductor crystals by means of light polarization modulation", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191981; https://doi.org/10.1117/12.191981
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