31 October 1994 Stress diagnostics in the plates of semiconductor crystals by means of light polarization modulation
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Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191981
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Peculiarities of the birefringence in Si-crystals caused by mechanical stress are investigated, using a method based on polarization modulation by means of a photoelastic modulator. Samples with the external operated stress and conventional Si-plates with the nonregular residual inner stress were tested by employing this method. Registration of the stress with the value more than 10-3 kg/cm2, investigation of the value of the stress spatial distribution and determination of the direction of the strain caused by this stress are available.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Boris K. Serdega, Boris K. Serdega, V. G. Zykov, V. G. Zykov, } "Stress diagnostics in the plates of semiconductor crystals by means of light polarization modulation", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191981; https://doi.org/10.1117/12.191981
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