28 July 1994 Optical constants and laser damage thresholds of silicon oxinitride thin films
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Abstract
SiOxNy thin films were prepared by Ion Beam Sputter Deposition (IBS) and Ion Assisted Deposition (IAD) on polished fused-silica- and BK7-substrates. The influence of process parameters on fundamental film properties was analyzed. Investigated parameters in the IAD process were gas composition, substrate temperature, ion current density, ion energy and neutralization current. The deposition rate and the gas composition were found to be essential parameters of the IBS process. Film characterization was performed by spectrophotometric analysis, laser calorimetry, laser damage testing according to ISO 11254 and X-ray spectroscopy to obtain refractive index, absorption coefficient, damage threshold/morphology and film stoichiometry respectively. Important technical details about both deposition processes are reported.
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Alexandra Starke, Alexandra Starke, Achim Bernhardt, Achim Bernhardt, } "Optical constants and laser damage thresholds of silicon oxinitride thin films", Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994); doi: 10.1117/12.180895; https://doi.org/10.1117/12.180895
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