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28 July 1994 Thermal and laser conditioning of production and rapid growth KDP and KD*P crystals
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Abstract
Large solid state lasers such as Beamlet and the proposed National Ignition Facility require optical materials with extremely high damage thresholds. Potassium dihydrogen phosphate (KDP) and its deuterated analog (KD*P) both require some form of conditioning to reach the design fluence of these lasers. Both the bulk material and the crystal surfaces must have damage thresholds in excess of 16 J/cm2 at 1053 nm and 11 J/cm2 at 351 nm for 3- ns pulselengths. The use of ultrafiltration techniques has been demonstrated to produce bulk material with damage thresholds exceeding these requirements with the use of R:1 laser conditioning. More recent results at LLNL using large-area laser conditioning and thermal annealing are described for a variety of state-of-the-art KDP and KD*P crystals. Results on thermally annealed KD*P with a deuteration range of 60% to 80% are also presented, and compared to those of ordinary KDP.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Jeffrey Atherton, Frank Rainer, James J. De Yoreo, Ian M. Thomas, N. P. Zaitseva, and Frank P. De Marco "Thermal and laser conditioning of production and rapid growth KDP and KD*P crystals", Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994); https://doi.org/10.1117/12.180912
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