1 June 1994 AlGaInP single quantum well laser diodes
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Proceedings Volume 2115, Visible and UV Lasers; (1994) https://doi.org/10.1117/12.172748
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The properties and low pressure organometallic vapor phase epitaxy of GaxIn1-xP/(AlGa)0.5In0.5P quantum well (QW) laser diode heterostructures with Al0.5In0.5P cladding layers, and having a wavelength of 614 < (lambda) < 690 nm, are described. At longer wavelengths ((lambda) > 660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result from a biaxially compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David P. Bour, David P. Bour, K. J. Beernink, K. J. Beernink, David W. Treat, David W. Treat, Randall S. Geels, Randall S. Geels, David F. Welch, David F. Welch, } "AlGaInP single quantum well laser diodes", Proc. SPIE 2115, Visible and UV Lasers, (1 June 1994); doi: 10.1117/12.172748; https://doi.org/10.1117/12.172748
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