AlGaInP single quantum well laser diodes

David P. Bour; K. J. Beernink; David W. Treat; Randall S. Geels; David F. Welch

doi:10.1117/12.172748

1 June 1994 AlGaInP single quantum well laser diodes

David P. Bour, K. J. Beernink, David W. Treat, Randall S. Geels, David F. Welch

Proceedings Volume 2115, Visible and UV Lasers; (1994) https://doi.org/10.1117/12.172748
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The properties and low pressure organometallic vapor phase epitaxy of Ga_xIn_1-xP/(AlGa)_0.5In_0.5P quantum well (QW) laser diode heterostructures with Al_0.5In_0.5P cladding layers, and having a wavelength of 614 < (lambda) < 690 nm, are described. At longer wavelengths ((lambda) > 660 nm), threshold current densities under 200 A/cm² and efficiencies greater than 75% result from a biaxially compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions.

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David P. Bour, K. J. Beernink, David W. Treat, Randall S. Geels, and David F. Welch "AlGaInP single quantum well laser diodes", Proc. SPIE 2115, Visible and UV Lasers, (1 June 1994); https://doi.org/10.1117/12.172748

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