1 June 1994 High-power visible semiconductor lasers
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Proceedings Volume 2115, Visible and UV Lasers; (1994) https://doi.org/10.1117/12.172746
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
High power visible semiconductor laser diodes are reported at wavelengths ranging from 620 nm to 690 nm. Broad area laser diodes exhibit peak cw output powers of 3.8 W from a 250 micrometers aperture at 688 nm and > 1 W cw at 636 nm from a 100 micrometers aperture. Monolithic 1 cm arrays with a 24% filling factor provide output powers of 30 W cw at 687 nm. Single mode lasers in the 620 nm wavelength band emit > 50 mW and operate at temperatures up to 80 degree(s)C.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Randall S. Geels, David F. Welch, David P. Bour, David W. Treat, Ross D. Bringans, "High-power visible semiconductor lasers", Proc. SPIE 2115, Visible and UV Lasers, (1 June 1994); doi: 10.1117/12.172746; https://doi.org/10.1117/12.172746
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