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16 May 1994 Transient relaxation dynamics in AlxGa1-xAs III-V compound semiconductor
Yingbin Zhai, Yibin Zhang, Shuicai Wang
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Proceedings Volume 2116, Generation, Amplification, and Measurement of Ultrashort Laser Pulses; (1994) https://doi.org/10.1117/12.175876
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Based on the theory of time-resolved spectrum, a time-resolved optical system is set up with analysis to this optical system in this paper. A detailed discrn;sion is made to the experimental structure on this system, dealing with the non--Jinear opticul phenomena and the light absorption saturation of Al=Ga:J.-xAs compound semiconductor within different x values. Our conclusion is that the electrons scattering in conduction band are due to the interaction between electrons and photons, phonons,defects and ionized impurities, whereas the interaction between electrons and phonons decreases the relative intensity of absorption of photons by electrons. 'fhe slow attenuation process contains various recombination mechanisms, with a relaxation process of about 200 ps.
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Yingbin Zhai, Yibin Zhang, and Shuicai Wang "Transient relaxation dynamics in AlxGa1-xAs III-V compound semiconductor", Proc. SPIE 2116, Generation, Amplification, and Measurement of Ultrashort Laser Pulses, (16 May 1994); https://doi.org/10.1117/12.175876
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KEYWORDS
Compound semiconductors
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