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21 July 1994 Angle-resolved time-of-flight studies of laser-assisted chemical etching reactions
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Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180859
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Laser-assisted chemical etching reactions of Cl2 with semiconductor surfaces are investigated using a cw supersonic Cl2 molecular beam coupled with an angle-resolved time-of- flight (TOF) technique. TOF spectra of reaction products are measured as a function of the detection angle, laser fluence, and normal component of incident molecules' translational energy. Our results show that the differences in the above etching reactions at 355 and 1064 nm radiations can be explained by the different mechanisms of laser-stimulated desorption process. The flux of the reaction products linearly increases with increasing the normal component of the incident translational energy of Cl2 molecules. It implies that the mechanism of Cl2 chemisorption on the surfaces might be a direct translationally activated dissociative chemisorption.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qi-Zong Qin, Kang-Zhan Zhang, and Ping-He Lu "Angle-resolved time-of-flight studies of laser-assisted chemical etching reactions", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180859
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