21 July 1994 Dynamics of photochemical processes of N2O absorbed on metal and semiconductor surfaces
Author Affiliations +
Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180855
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Photodissociation dynamics of N2O adsorbed on Si(100) has been compared with that on Pt(111). N2O is adsorbed molecularly on both of the surfaces at lower than 95 K. Upon the irradiation of excimer laser pulses at 193 and 248 nm, adsorbed N2O is dissociated to oxygen and N2. While oxygen remains on the surfaces, N2 desorbs from the surfaces. Translational energy distributions of N2 are measured by time-of-flight (TOF) spectroscopy. The TOF distributions of N2 desorbing from Si(100) as well as Pt(111) show nonthermal multiple velocity components. There are some differences in the N2 desorption characteristics between the two cases. In particular, the translational energy distribution of N2 fragments from Si(100) depends on the desorption angle. Furthermore, the N2 desorption from Si(100) is peaked at approximately 30 degree(s) from the surface normal. These peculiar features observed in N2O photodissociation on Si(100) are discussed in relation to the adsorption structure of N2O.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyasu Matsumoto, Yoshiyasu Matsumoto, Jihwa Lee, Jihwa Lee, H. Kato, H. Kato, K. Sawabe, K. Sawabe, "Dynamics of photochemical processes of N2O absorbed on metal and semiconductor surfaces", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); doi: 10.1117/12.180855; https://doi.org/10.1117/12.180855

Back to Top