21 July 1994 In-situ monitoring of molecular beam epitaxial growth using single photon ionization
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Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180867
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Single photon laser ionization time-of-flight mass spectroscopy is used to monitor the gaseous fluxes of Ga, As2, and As4, which are relevant in molecular beam epitaxy (MBE) of GaAs. This noninvasive and real-time technique measures densities, and hence fluxes, of multiple chemical species impinging on or scattered from a substrate during conventional MBE. With single photon ionization at 118 nm (10.5 eV), the energy is sufficient to ionize the species, but insufficient to ionize and fragment. The lack of molecular fragmentation greatly simplifies the interpretation of mass spectra. Additionally, the probe geometry permits simultaneous film growth monitoring using RHEED. Results will be presented on the probing of scattering and desorption of III-V MBE species during GaAs growth. This technique promises to be a valuable in-situ diagnostic for III-V and II-VI MBE.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
April L. Alstrin, April L. Alstrin, Adina K. Kunz, Adina K. Kunz, Stephen R. Leone, Stephen R. Leone, } "In-situ monitoring of molecular beam epitaxial growth using single photon ionization", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); doi: 10.1117/12.180867; https://doi.org/10.1117/12.180867
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