21 July 1994 Nanocrystal spectroscopy and photophysics: direct gap CdSe and indirect gap silicon
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Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180863
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Semiconductor nanocrystals containing 102 to 103 atoms show significant electronic quantum size effects at energies near the band gap. In solid state terms, this happens because of the large delocalization lengths (ie, small effective masses) that naturally occur for electrons and holes at band extrema in bulk crystals. This size dependence also has a clear, physically equivalent explanation in the language of molecular orbitals. Close analogies exist with the spectroscopy of large aromatic hydrocarbons. In this short manuscript, I compare two nanocrystal systems that have become prototypes for direct and indirect gap behavior: CdSe and Si. Despite the fact that both materials are tetrahedrally hybridized semiconductors of similar band gaps, the effects of quantum confinement are quite different.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Louis E. Brus, Louis E. Brus, } "Nanocrystal spectroscopy and photophysics: direct gap CdSe and indirect gap silicon", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); doi: 10.1117/12.180863; https://doi.org/10.1117/12.180863
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