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21 July 1994 Surface modification of semiconductors by laser-induced surface electromagnetic wave etching
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Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180861
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The surface modification of semiconductors by laser-induced surface electromagnetic wave etching was investigated. With the novel etching method using a holographic exposure system, submicron periodic dot structures were fabricated directly on semiconductor substrates (n-InP, n-GaAs). Making the best of laser polarization dependence in this etching system, a variety of surface modification could be obtained on the surface of InP and GaAs. Especially, in the case of using s-polarization laser lights, periodic submicron dot structure could be fabricated directly with a single step process without any mask process. The size of dots by the etching depended on the incident laser wavelength, and the smallest size of dots was 80 nm. The exponential growth of the SEW grating with the positive gain was demonstrated experimentally. As the etched depth of the SEW grating approached to the laser wavelength, the saturation of the growth due to self-limiting effect was also demonstrated experimentally for the first time.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mizunori Ezaki, Hiroshi Kumagai, Koichi Toyoda, and Minoru Obara "Surface modification of semiconductors by laser-induced surface electromagnetic wave etching", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180861
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