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21 July 1994 ZnSe/GaAs epitaxial film modification by soft x-ray irradiation
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Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180836
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The possibility of ZnSe/GaAs epitaxial layer enhancing by means of soft X-ray irradiation is reported. High intensity soft X-rays in waverange 80-120 A are produced by laser plasma source with waveguide X-ray optics. The X-ray diffraction data and photoluminescence spectra excited by He-Cd laser (T=4.2 K) are represented.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valery Ju. Znamenskiy, O. B. Anan'in, R. Z. Bagateliya, Yuri A. Bykovsky, Yuri V. Eryomin, Alexander Vladimirov Kovalenko, I. K. Novikov, and A. A. Zhuravlev "ZnSe/GaAs epitaxial film modification by soft x-ray irradiation", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180836
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