11 May 1994 Effect of AlAs mole fraction on the integrated luminescence intensity of GaAs/AlxGa1 - xAs quantum well heterostructures
Author Affiliations +
Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175731
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The photoluminescent properties of GaAs/AlxGa1 - xAs multiple quantum well structures grown on (100) GaAs substrates by molecular beam epitaxy have been investigated as a function of the AlAs mole fraction. It is found that as the AlAs mole fraction in the AlxGa1 - xAs barriers is increased, the corresponding photoluminescent peak intensity of the quantum well structures increases and reaches a maximum at an AlAs mole fraction of about 45%. Further increases in the Al content of the barriers beyond 45% results into a decrease in the luminescence efficiency. At the maximum intensity, the peak luminescence from the quantum well structures is enhanced by about two orders of magnitude (at room temperature) when compared to the luminescence from such structures with an AlAs mole fraction of 20% in the barriers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Elias Towe, Docai C. Sun, R. H. Henderson, "Effect of AlAs mole fraction on the integrated luminescence intensity of GaAs/AlxGa1 - xAs quantum well heterostructures", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175731; https://doi.org/10.1117/12.175731
PROCEEDINGS
10 PAGES


SHARE
Back to Top