11 May 1994 Effects of charge accumulation and biasing on resonant tunneling energies and tunneling dynamics
Author Affiliations +
Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175722
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We introduce charge accumulation in quantum wells through the use of a nonlinear Schrodinger equation. Looking first at infinite and finite square wells allows us to calculate the new energy spectrum including the separate effects of a biasing electric field and charge accumulation. This gives us insight into the new resonant tunneling energies that arise due to the quasibound states being shifted by either the external field or the reaction field built up through the accumulation of charge. Using a double barrier potential, we calculate the transmission coefficient with and without the external bias field and then with charge accumulation. To study the tunneling dynamics, we first start with a single barrier in an infinite well and discover a fractal-like character to the probability for finding an electron wavepacket in one side of the structure. Finally we numerically integrate the full time- dependent nonlinear Schrodinger equation with various barrier potentials to obtain the dynamics of a wavepacket incident on the structures.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David A. Cardimona, Paul M. Alsing, Anjali Singh, Vassilios Kovanis, "Effects of charge accumulation and biasing on resonant tunneling energies and tunneling dynamics", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175722; https://doi.org/10.1117/12.175722
PROCEEDINGS
11 PAGES


SHARE
Back to Top