11 May 1994 Enhanced quantum well intermixing using multiple ion implantation
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175702
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Quantum well intermixing has been performed using ion implantation techniques to increase the optical bandgap in a spatially selective manner. We show that there is a maximum single dose beyond which further intermixing of the QWs is impeded by damage to the semiconductor surface. We overcome this problem by using a series of implants and rapid thermal anneals, with each rapid thermal anneal repairing the crystal surface. Using this technique we have demonstrated shifts in optical bandgap for multiple implants greater than seven times that observed for a single implant.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philip J. Poole, Philip J. Poole, Paul Garrett Piva, Paul Garrett Piva, Margaret Buchanan, Margaret Buchanan, Garth Champion, Garth Champion, Ian M. Templeton, Ian M. Templeton, Geof C. Aers, Geof C. Aers, Robin L. Williams, Robin L. Williams, Alain P. Roth, Alain P. Roth, Zbigniew R. Wasilewski, Zbigniew R. Wasilewski, Emil S. Koteles, Emil S. Koteles, N. Sylvain Charbonneau, N. Sylvain Charbonneau, Jacques Beauvais, Jacques Beauvais, } "Enhanced quantum well intermixing using multiple ion implantation", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175702; https://doi.org/10.1117/12.175702
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