The time-resolved photoluminescence of semiconductor doped glasses was obtained as a function of laser excitation intensity at a low temperature. At laser intensities lower than 3.3 X 105 W/cm2, only the exciton recombination with a lifetime of 4 ns was obtained. When the laser intensity was increased, the biexciton recombination with a lifetime of about 1 ns was observed. At very high laser intensities, the free carrier recombination with a much shorter lifetime dominated. Relative intensities of photoluminescence contributed from excitons, biexcitons, and free carriers were estimated from the laser intensity distribution in the semiconductor doped glass and agree with experimental results.