11 May 1994 Mechanism of the carrier recombination in semiconductor dots
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175720
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The time-resolved photoluminescence of semiconductor doped glasses was obtained as a function of laser excitation intensity at a low temperature. At laser intensities lower than 3.3 X 105 W/cm2, only the exciton recombination with a lifetime of 4 ns was obtained. When the laser intensity was increased, the biexciton recombination with a lifetime of about 1 ns was observed. At very high laser intensities, the free carrier recombination with a much shorter lifetime dominated. Relative intensities of photoluminescence contributed from excitons, biexcitons, and free carriers were estimated from the laser intensity distribution in the semiconductor doped glass and agree with experimental results.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jim P. Zheng, Jim P. Zheng, HoiSing Kwok, HoiSing Kwok, } "Mechanism of the carrier recombination in semiconductor dots", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175720; https://doi.org/10.1117/12.175720
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