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11 May 1994 Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994)
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We have studied the photoreflectance spectra at 300 K and 80 K related to the intersubband transitions from several (001) GaAs/GaAlAs structures fabricated by molecular beam epitaxy using the digital alloy compositional grading (DACG) method. These samples include an asymmetric triangular quantum well (ATQW) and three rectangular quantum wells (RQW) with different unit cells [50 angstrom (X 2), 25 angstrom (X 4) and 12.5 angstrom (X 8)]. For the ATQW comparison of the observed intersubband resonances with a theoretical calculation (envelope function method) provided a self-consistent verification that the DACG produced the intended result, i.e., an effective linearly graded profile. For the RQW materials the 12.5 angstrom unit cell sample essentially had the characteristics of the intended analog configuration while the other two samples displayed observable differences.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao Qiang, Fred H. Pollak, Ying-Sheng Huang, W. S. Chi, R. Droopad, David L. Mathine, and George N. Maracas "Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994);

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