11 May 1994 Picosecond time-resolved investigations of carrier lifetime and carrier capture in InGaAs/GaAs quantum dots
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175717
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We have investigated the excitonic lifetime and the carrier capture in InGaAs/GaAs quantum dots with geometrical widths down to 40 nm by time resolved photoluminescence spectroscopy. The excitonic lifetime decreases with decreasing dot size due to nonradiative recombination at the open sidewalls of the quantum dots. Using a model calculation to fit the experimentally observed width dependence of the lifetime the surface recombination velocity is determined to be about 7*104 cm/s at T equals 60 K. Lateral carrier capture into the dots leads to an increase of the time integrated photoluminescence intensity above that of a 2D reference. The variation of the capture time as a function of the dot size could be modeled by taking into account both the vertical and the lateral carrier capture.
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Franz X. Daiminger, Franz X. Daiminger, Axel Schmidt, Axel Schmidt, Frank Faller, Frank Faller, Alfred W. B. Forchel, Alfred W. B. Forchel, } "Picosecond time-resolved investigations of carrier lifetime and carrier capture in InGaAs/GaAs quantum dots", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175717; https://doi.org/10.1117/12.175717
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