11 May 1994 Quantum well intermixing for optoelectronic integration
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994); doi: 10.1117/12.175733
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Intermixing the wells and barriers of quantum well structures generally results in an increase in the bandgap and is accompanied by changes in the refractive index. A range of techniques, based on impurity diffusion, dielectric capping and laser annealing, have been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer -- such processes offer the prospect of a powerful and relatively simple fabrication route for integrating optoelectronic devices and for forming photonic integrated circuits (PICs). Recent progress in QWI techniques is reviewed, concentrating on processes that are compatible with PIC applications and illustrated with device demonstrators.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John H. Marsh, A. Catrina Bryce, "Quantum well intermixing for optoelectronic integration", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175733; https://doi.org/10.1117/12.175733
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KEYWORDS
Annealing

Quantum wells

Fluorine

Diffusion

Waveguides

Photonic integrated circuits

Boron

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