Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots

Hao Qiang; Fred H. Pollak; Yin-Sheng Tang; Peidong D. Wang; Cliva M. Sotomayor-Torres

doi:10.1117/12.175719

11 May 1994 Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga_0.7Al_0.3As quantum dots

Hao Qiang, Fred H. Pollak, Yin-Sheng Tang, Peidong D. Wang, Cliva M. Sotomayor-Torres

Author Affiliations +

Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175719
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Using contactless photoreflectance at 300 K we have studied several GaAs/Ga_0.7Al_0.3As quantum dot arrays fabricated by reactive-ion etching using SiCl₄. The spectrum from a control sample that had no dots also was recorded. From the observed shifts of the fundamental conduction to heavy- and light-hole quantum transitions we have evaluated the magnitude and nature of the process-induced strain in the dots.

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Hao Qiang, Fred H. Pollak, Yin-Sheng Tang, Peidong D. Wang, and Cliva M. Sotomayor-Torres "Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga_0.7Al_0.3As quantum dots", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175719

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