11 May 1994 Second harmonic generation in p-type GaAs quantum wells
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Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175709
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We have performed second harmonic generation (SHG) measurements in the 3 - 5 micrometers region on p-type stepped quantum wells (QWs) using the tunable, high peak power pulses generated by a free electron laser. The samples were grown by MBE on (100) GaAs wafers. The asymmetric QWs are made of m monolayers of GaAs and n monolayers of Al0.5Ga0.5As sandwiched between AlAs barriers. The QWs were characterized by x-ray diffraction and room temperature photoluminescence (PL). We measured an order of magnitude enhancement of the second order susceptibility over bulk GaAs. In contrast to n-type QWs, the dominant component is the (Chi) xyz(2) component. The results are explained by a full pseudopotential band structure calculation of (Chi) (2).
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiwei Xu, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella, H. Alan Schwettman, "Second harmonic generation in p-type GaAs quantum wells", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); doi: 10.1117/12.175709; https://doi.org/10.1117/12.175709

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