Paper
11 May 1994 Time-resolved studies of spatially direct and indirect transitions in GaAs/AlGaAs and InGaAs/GaAs quantum wires
Philip J. Poole, N. Sylvain Charbonneau, Michael Fritze, Arto V. Nurmikko
Author Affiliations +
Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175715
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Laser holographic lithography and selective chemical etching have been used to create GaAs/AlGaAs and InGaAs/GaAs quantum well wires. Strong differences are observed between the photoluminescence spectra from the GaAs and InGaAs quantum wires, with the former being dominated by spatially indirect transitions, and the latter by direct transitions. Detailed time resolved photoluminescence studies show a red shift in photoluminescence energy with increasing time delay after excitation for the indirect transition in the GaAs wires. This is accompanied by a non-exponential decay time which increases from 10 ns to greater than 150 ns as the delay time is increased (in a manner similar to that observed in nipi doping superlattices). The InGaAs wires show no such behavior, with a decay time constant of 320 ps at 1.8 K, independent of time delay after excitation, both indicative of a spatially direct transition.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philip J. Poole, N. Sylvain Charbonneau, Michael Fritze, and Arto V. Nurmikko "Time-resolved studies of spatially direct and indirect transitions in GaAs/AlGaAs and InGaAs/GaAs quantum wires", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175715
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KEYWORDS
Quantum wells

Etching

Indium gallium arsenide

Gallium arsenide

Luminescence

Electrons

Picosecond phenomena

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