11 May 1994 Control of surface morphology and strain relaxation in InGaAs grown on GaAs using a step-graded buffer
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175790
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The surface morphology and degree of strain relaxation in compositionally graded InxGa1-xAs epilayers grown on GaAs substrates can be controlled by the growth conditions. InxGa1-xAs epilayers grown as compositionally step-graded buffers on (001) GaAs by solid-source molecular beam epitaxy at a constant substrate temperature and GaAs growth rate (>= 500 degree(s)C, 0.9 micrometers /hr) undergo a transition from two to three dimensional morphology as the indium concentration is increased from x equals 0.3 to x equals 0.4. The strain relaxation is asymmetric in the <110> in- plane directions and severe roughening with the formation of cusps occurs preferentially in the (110) direction. When the substrate growth temperature is lowered successively for each InGaAs composition and the Ga beam flux lowered for the growth of the x equals 0.4 layer, the surface morphology becomes two-dimensional and the strain relaxation symmetric and greater than 90% in the two <110> directions.
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Rachel S. Goldman, Rachel S. Goldman, J. C. P. Chang, J. C. P. Chang, Karen L. Kavanagh, Karen L. Kavanagh, } "Control of surface morphology and strain relaxation in InGaAs grown on GaAs using a step-graded buffer", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175790; https://doi.org/10.1117/12.175790
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