11 May 1994 Diffraction condition dependence of reflection high-energy electron diffraction (RHEED) dampening during molecular-beam epitaxy (MBE)growth
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175791
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
RHEED oscillations were studied for GaAs growth for azimuthal angles of 0 degree(s) and 15 degree(s) as the angle of incidence was changed between 0.4 degree(s) and 1.7 degree(s). The angle of incidence was then held constant while the azimuthal angle was varied from 0 degree(s) to 85 degree(s). From the recorded oscillations the static surface intensity, oscillation intensity, oscillation phase, and dampening were extracted. The static surface intensity was found to change with angle and displayed a trend very similar to that reported in the literature. The intensity of the oscillations was found to vary periodically with angle of incidence and thus supported the theory that interference between layers of different height is one source of the oscillations. However, the phase of the oscillations deviated from that predicted by a simple, kinematic-scattering interference model. The dampening of the oscillations was found to vary strongly with angle of incidence. There existed a range of angles of incidence over which the phase was close to that expected for a simple interference model and for which the dampening was essentially constant.
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Tom R. Block, Tom R. Block, Kurt G. Eiynk, Kurt G. Eiynk, Dean P. Neikirk, Dean P. Neikirk, Ben G. Streetman, Ben G. Streetman, } "Diffraction condition dependence of reflection high-energy electron diffraction (RHEED) dampening during molecular-beam epitaxy (MBE)growth", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175791; https://doi.org/10.1117/12.175791
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