11 May 1994 Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement heterostructure (SCH) laser structures
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175785
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We report the molecular beam epitaxial growth of the quaternary (Zn,Mg)(S,Se) compound as well as the incorporation of this quaternary into a pseudomorphic SCH blue-green laser diode configuration. X ray diffraction and TEM imaging indicate that the quaternary (Zn,Mg)(S,Se) can accommodate substantially more strain than the binary ZnSe; pseudomorphic epilayers with thickness of about 2 micrometers could be grown within a strain range of -0.225% (tension) and 0.137% (compression) at room temperature. Room temperature continuous wave operation of diode lasers having the quaternary as cladding layers was achieved with a lifetime of longer than 20 seconds. These index-guided laser diodes, employing the Zn(Se,Te) graded ohmic contact (adopted to contact p-type (Zn,Mg)(S,Se), have provided a significant reduction in lasing threshold voltage to 4.2 V.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. He, L. He, Donald C. Grillo, Donald C. Grillo, Jung Han, Jung Han, Yongping Fan, Yongping Fan, Mike D. Ringle, Mike D. Ringle, S. M. Clark, S. M. Clark, Robert L. Gunshor, Robert L. Gunshor, Heonsu Jeon, Heonsu Jeon, A. Salokatve, A. Salokatve, Arto V. Nurmikko, Arto V. Nurmikko, Guo-Chun Hua, Guo-Chun Hua, Nobuo Otsuka, Nobuo Otsuka, } "Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement heterostructure (SCH) laser structures", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175785; https://doi.org/10.1117/12.175785
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