11 May 1994 Growth and characterization of spontaneously ordered AlInAs and GaInAs on InP
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175777
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Spontaneous CuPt-type ordering of Group III atoms on the (111) subplanes of the GaInAs2 and AlInAs2 epitaxially deposited by atmospheric pressure organometallic vapor phase epitaxy is observed by transmission electron microscopy. We find positive correlation between the observation of CuPt-like (111) superlattice diffraction spots in transmission electron diffraction (TED) patterns and reduced band gap energies, with a reduction of more than 75 meV for GaInAs2 and 25 meV for AlInAs2. For these materials, ordering depends strongly on growth temperature, but only moderately on substrate misorientation. Room temperature time-resolved photoconductivity of ordered GaInAs2 exhibit 50 microsecond(s) ec decay and behavior indicative of carrier localization.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Douglas J. Arent, M. Bode, P. Ahrenkiel, R. Ahrenkiel, Kristine A. Bertness, Sarah R. Kurtz, C. Kramer, and J. M. Olson "Growth and characterization of spontaneously ordered AlInAs and GaInAs on InP", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175777; https://doi.org/10.1117/12.175777

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