InAsP/InP strained quantum wells grown by gas-source molecular beam epitaxy on InP(100) and (111)B substrates

Charles W. Tu; Hong Q. Hou

doi:10.1117/12.175787

11 May 1994 InAsP/InP strained quantum wells grown by gas-source molecular-beam epitaxy on InP(100) and (111)B substrates

Charles W. Tu, Hong Q. Hou

Author Affiliations +

Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175787
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The strained InAsP/InP system can be a viable alternative material to the quaternary InGaAsP on InP because the composition and thickness of InAsP can be controlled independently in gas- source MBE and because strain could provide another degree of freedom in device design. We have developed an in situ technique for composition determination in InAsP and have shown that InAsP/InP (100) strained multiple quantum wells exhibit quantum-confined Stark effect in the 1.3 micrometers region. The existence of an internal piezoelectric field in InAsP/InP (111)B strained single quantum wells is demonstrated by the blue energy shift from carrier screening in photoluminescence spectra.

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Charles W. Tu and Hong Q. Hou "InAsP/InP strained quantum wells grown by gas-source molecular-beam epitaxy on InP(100) and (111)B substrates", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); https://doi.org/10.1117/12.175787

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