11 May 1994 Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175778
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
A detailed study of growth characteristics of highly strained extremely thin InAs and GaAs layers on InP substrates was made. Single strained layer heterostructures as well as short- period strained-layer superlattices (SPSLSs) were grown with low-pressure metalorganic vapor phase epitaxy. Different growth parameters were varied to clarify the influence of growth temperature and growth time on growth rate or layer quality of extremely thin InAs and GaAs strained layers. InAs/In0.53Ga0.47As, GaAs/In0.53Ga0.47As and InAs/GaAs/In0.53Ga0.47As superlattice test structures were developed and realized providing information about growth rates and layer quality of InAs an GaAs under strain in SPSLSs. All test structure types were grown with respect to the special requirements of high resolution x ray diffraction (HRXRD). Samples with various strained layer thicknesses were analyzed by HRXRD and compared with simulation results. Simulations based on the solution of the Takagi-Taupin equations of the dynamical diffraction theory were made using a commercial simulation program.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Lindner, Q. Liu, F. Scheffer, W. Prost, Franz-Josef Tegude, "Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175778; https://doi.org/10.1117/12.175778
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