11 May 1994 Piezoactive (110)- and (h11)-InAs/GaAs heterostructures for nonlinear optical applications
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175788
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We investigate the optical properties of (h11) and (110) InAs/GaAs heterostructures with built- in piezoelectrical fields. In both cases we find that the lateral structure of the quantum wells can decisively enhance the impact of the internal electric fields on their optical properties. In the first case this is due to the local screening of piezoelectric fields. In the second case it is the result of artificially introduced lateral piezofields. Both concepts open the way to a new class of semiconductor heterostructures with strong optical nonlinearities.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthias Ilg, Matthias Ilg, Klaus H. Ploog, Klaus H. Ploog, Achim Trampert, Achim Trampert, } "Piezoactive (110)- and (h11)-InAs/GaAs heterostructures for nonlinear optical applications", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175788; https://doi.org/10.1117/12.175788

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