11 May 1994 Thin film growth effects related to the propensity for clustering
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Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175793
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Control of the morphology of epitaxial thin films is a prerequisite for device applications. Particularly crucial is the formation of smooth and defect-free hetero-interfaces at elevated temperatures where cluster formation is thermodynamically favored. In particular knowledge of the early stage of clustering is crucial as nucleation often results in aggregates of a few atoms which could still be integrated during further growth. Only few data exist for this stage to date due to small cluster sizes and the transient time behavior which complicate measurements with most standard surface techniques. An alternative approach is described to study the early stage of cluster growth as a by-product in late stage growth experiments. When applicable, like in the case of Ga clustering on GaAs(001) as discussed in this paper, simpler technical access and higher precision in the determination of a time scale favor this method.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin T. Zinke-Allmang, Martin T. Zinke-Allmang, S. C. Puddephatt, S. C. Puddephatt, Ted D. Lowes, Ted D. Lowes, } "Thin film growth effects related to the propensity for clustering", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); doi: 10.1117/12.175793; https://doi.org/10.1117/12.175793
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