Characterization of very thin MBE-grown Ge epilayers on (001) Si

Wolfgang Kissinger; Hans Joerg Osten; G. Lippert; Burghard Dietrich; Eberhard Bugiel

doi:10.1117/12.176847

26 May 1994 Characterization of very thin MBE-grown Ge epilayers on (001) Si

Wolfgang Kissinger, Hans Joerg Osten, G. Lippert, Burghard Dietrich, Eberhard Bugiel

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176847
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The preparation of atomically sharp interfaces for the Si-Ge system is of remarkable interest for the preparation of ultrathin layers and superlattices. We investigated the influence of the molecular beam epitaxy (MBE) growth conditions on the properties of five monolayers of germanium embedded in a (001) silicon matrix for a conventional as well as an antimony- mediated growth in the temperature region from 300 degree(s)C to 450 degree(s)C. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy (TEM); they show corresponding results for all three methods of investigation.

Citation Download Citation

Wolfgang Kissinger, Hans Joerg Osten, G. Lippert, Burghard Dietrich, and Eberhard Bugiel "Characterization of very thin MBE-grown Ge epilayers on (001) Si", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176847

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