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26 May 1994 Correlation of optical, x-ray, and electron microscopy measurements on semiconductor multilayer structures
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Abstract
Techniques based on optical, x ray, and electron microscopy measurements are applied to characterized a wide variety of semiconductor multilayer structures. Bragg mirrors serve as valuable test structures for evaluating the epitaxial uniformity of crystal growth systems. Careful characterization of half-wave space single quantum wells provides a method for determining their complex refractive indices using reflectance spectroscopy. Comparison of cross-sectional microphotoluminescence to surface-normal photoluminescence, combined with these characterization techniques, allows studies of spontaneous emission in microcavities and elucidates the difficulties with using surface-normal photoluminescence to determine the alloy composition of the mirror layers. The application of these characterization methods to visible- wavelength AlGaAs mirrors, 485-720 nm, enables the development of these mirrors for uses such as optically tailored substrates and visible surface-emitter or detector arrays.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David H. Christensen, Robert K. Hickernell, David T. Schaafsma, Joseph G. Pellegrino, Mark J. McCollum, James R. Hill, and R. S. Rai "Correlation of optical, x-ray, and electron microscopy measurements on semiconductor multilayer structures", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176851
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