26 May 1994 Electroreflectance line-shape analysis for coupled GaAs-AlAs superlattices in strong electric fields
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Abstract
Electroreflectance (ER) and photocurrent spectra of a strongly and a weakly coupled GaAs- AlAs superlattice are investigated in the Wannier-Stark regime. It is shown that both types of spectra can only be described satisfactorily when, in addition to the excitonic transitions of the first heavy and light hole subband with the first conduction subband, band-to-band transition are taken into account. Therefore, a total of four rather just the two excitonic transitions are necessary to fit the experimental ER spectra. Finally, to describe all features in the ER spectra, interferences within the layered structure have to be included.
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Udo Behn, Udo Behn, Holger T. Grahn, Holger T. Grahn, Klaus H. Ploog, Klaus H. Ploog, "Electroreflectance line-shape analysis for coupled GaAs-AlAs superlattices in strong electric fields", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176852; https://doi.org/10.1117/12.176852
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