26 May 1994 Interface disorder effects on confined phonons in semiconductor microstructures
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Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994); doi: 10.1117/12.176856
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The lattice dynamics of superlattices is now very well understood and most of the theoretical predictions have been quantitatively verified by Raman scattering, at least on GaAS/AlAS structures. This system is particularly interesting for several reasons: - samples are currently available at a very high and controlled quality, phonon dispersion curves in the bulk constituents GaAs and AlAs are known, almost perfect lattice matching is achieved, - GaAlAs alloy lattice dynamics is well described by reasonably simple models. All theses conditions allowed a high degree ofsophistication in the comparison between experiments and theory for GaAS/AlAS superlathces1 . We will review these studies in this communication and emphasize the relation between the GaAs and AlAs optical mode frequency and the interface roughness. Finally we will quote some experimental results on other systems. We will stress that the addition of strain make the quantitative interpretation much more difficult and review some recent progress in this direction.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Jusserand, "Interface disorder effects on confined phonons in semiconductor microstructures", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); doi: 10.1117/12.176856; https://doi.org/10.1117/12.176856
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KEYWORDS
Gallium arsenide

Interfaces

Phonons

Aluminum

Raman spectroscopy

Superlattices

Raman scattering

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