Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy

Michael Gal; P. Kraisingdecha; Chit Shwe

doi:10.1117/12.176910

26 May 1994 Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy

Michael Gal, P. Kraisingdecha, Chit Shwe

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176910
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We demonstrate the possibility of measuring the depth distribution of damage in GaAs using differential reflectance spectroscopy. Damage was intentionally generated by various ion- assisted processes, such as ion implantation and ion-assisted plasma etching. The high sensitivity of the techniques allowed us to measure damage profiles over a large range of ion energies and ion doses.

Citation Download Citation

Michael Gal, P. Kraisingdecha, and Chit Shwe "Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176910

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