Translator Disclaimer
26 May 1994 Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy
Author Affiliations +
Abstract
We demonstrate the possibility of measuring the depth distribution of damage in GaAs using differential reflectance spectroscopy. Damage was intentionally generated by various ion- assisted processes, such as ion implantation and ion-assisted plasma etching. The high sensitivity of the techniques allowed us to measure damage profiles over a large range of ion energies and ion doses.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Gal, P. Kraisingdecha, and Chit Shwe "Measurement of ion-induced damage profiles in GaAs using modulation spectroscopy", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176910
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top