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6 May 1994 Electron-hole correlations in the subpicosecond dynamics of the electron-hole plasma in GaAs
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175895
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Electron-hole correlations play an important role for understanding the conditions of thermalization and the optical properties of the electron-hole plasma (EHP) in the subpicosecond regime. We first discuss the consideration of the dynamic screening in the framework of Boltzmann's transport equations. Carrier-carrier scattering rates are computed and compared for different approximations. We show that the dynamic screening significantly increases the electron-electron collision rate. Then we discuss the variation of the absorption coefficient in the presence of a non-thermalized EHP. We show that the change of the electron-hole correlations induces a small oscillation of the absorption around the excitation energy.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jacques H. Collet, J. L. Iehl, and R. Grac "Electron-hole correlations in the subpicosecond dynamics of the electron-hole plasma in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175895
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