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6 May 1994 Electron-hole scattering in p-GaAs
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994)
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We report the direct experimental determination of the energy loss rate of photoexcited minority electrons in highly doped p-GaAs. At 300 K, the luminescence spectra are measured with high time-resolution (approximately 100 fs, using up-conversion) after low excitation (n < 1017 cm-3) of additional electron-hole pairs. The hole concentration due to doping is by two orders of magnitude higher, which ensures that the hole energy distribution stays thermal at 300 K. Within the first picosecond after excitation a rapid change of the luminescence spectra is observed, which can be clearly attributed to the energy distribution of the photoexcited minority electrons. The electron temperature decreases within 500 fs from 900 K down to less than 350 K. The energy loss rate per electron exceeds the energy loss rate by electron-phonon interaction by almost an order of magnitude. Indications of nonthermal distributions in the temporal range of 0 to 200 fs are present.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rosana Rodrigues, P. Buchberger, and Ralph A. Hoepfel "Electron-hole scattering in p-GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994);

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