6 May 1994 High-field electron transport in GaAs: a picosecond time-resolved Raman probe
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175890
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Electric-field-induced non-equilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors has been studied by transient Raman spectroscopy on a picosecond time scale and at T approximately equals 80 K. For an injected carrier density of n approximately equals 2.2 X 1018 cm-3 and electric field intensity E equals 25 KV/cm, the drift velocity of electrons as high as Vd equals 2.5 X 107 cm/sec was observed. We demonstrate in this work that time-resolved Raman spectroscopy is a feasible technique to interrogate both ballistic transport and velocity overshoot phenomena in nanostructure semiconductors.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric D. Grann, Eric D. Grann, Shou Jong Sheih, Shou Jong Sheih, C. Chia, C. Chia, Kong-Thon F. Tsen, Kong-Thon F. Tsen, Otto F. Sankey, Otto F. Sankey, George N. Maracas, George N. Maracas, R. Droopad, R. Droopad, Arnel A. Salvador, Arnel A. Salvador, Andrei Botchkarev, Andrei Botchkarev, Hadis Morkoc, Hadis Morkoc, } "High-field electron transport in GaAs: a picosecond time-resolved Raman probe", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175890; https://doi.org/10.1117/12.175890

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