Influence of excitonic linewidth on resonant tunneling time of electrons in double quantum wells under electric fields

Shi Rong Jin; Zhong Ying Xu; Jinsheng Luo

doi:10.1117/12.175891

6 May 1994 Influence of excitonic linewidth on resonant tunneling time of electrons in double quantum wells under electric fields

Shi Rong Jin, Zhong Ying Xu, Jinsheng Luo

Author Affiliations +

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175891
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A modified coherent model, which includes the inhomogeneous broadening effect of the excitonic linewidth, of the resonant tunneling (RT) of electrons in double quantum wells is presented. The validity of the model is confirmed with the experiments and shows that the resonant tunneling process of electrons can be mostly explained by the simple coherent theory. We discuss the influence of linewidth on resonant tunneling time, which is strongly dependent on the barrier thickness L_B, by introducing the contrast-ratio (Lambda) and the full width at half depth (FWHD) of the RT valley, and we found that (Lambda) first increases with increasing barrier thickness, reaches a maximum, and then decreases with a further increase of L_B, in striking contrast to the Fabry-Perot (FP) analogy where a monotonous increase of the current peak-to-valley ratio is predicted. A decrease of the FWHD monotonously with increase of L_B is also found. We discuss the potential application of our results in the design of tunneling devices.

Citation Download Citation

Shi Rong Jin, Zhong Ying Xu, and Jinsheng Luo "Influence of excitonic linewidth on resonant tunneling time of electrons in double quantum wells under electric fields", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175891

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