6 May 1994 Investigation of kinetics of photoconductivity in PbTe(Ga) under ultrashort-pulse laser excitation
Author Affiliations +
Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175907
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Relaxation of photoconductivity (PC) in Ga-doped PbTe under picosecond pulse excitation was investigated in the temperature range of 77 - 200 K. Processes of nano-, micro-, and millisecond time scale were observed depending on excitation level and temperature. At 160 K PC response shortened up to 1 ns making it possible to resolve single pulses of picosecond pulse train. Studies of temperature dependence of PC lifetime revealed additional low- frequency process (far less 800 Hz) which was closely connected to long-term relaxation of PC at low temperatures. The two-level model was shown to explain qualitatively main PC processes observed in PbTe(Ga) crystals.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg B. Mavritsky, Oleg B. Mavritsky, Alexander I. Lebedev, Alexander I. Lebedev, Irina A. Sluchinskaya, Irina A. Sluchinskaya, } "Investigation of kinetics of photoconductivity in PbTe(Ga) under ultrashort-pulse laser excitation", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175907; https://doi.org/10.1117/12.175907

Back to Top